A 22FDX Wi-Fi PA Demonstrating a New LDMOS Device with 10V Breakdown Achieving Output Power of 29.5dBm at 40% PAE

This paper presents a new LDMOS device in 22FDX for Wi-Fi PA applications. The device has significantly better Ft, Fmax, and higher breakdown voltage than conventional LDMOS, thus making it an excellent choice for integrated PA applications. The two stacked PA design with this new LDMOS device achieves 29.5dBm of Saturated Power with 40% PAE and 26dB Low Power Gain at 6GHz. Reliability stress test for 72hours and ruggedness test at a VSWR of 6:1 show almost no degradation in Gain, Psat and PAE. The ruggedness test at VSWR of 6:1 was repeated with the supply voltage increased from nominal supply of 5V to show the new LDMOS device breaks down at 10V, which is one of the highest reported breakdown voltage for a LDMOS device in sub-45nm FDSOI technology. Also, this Wi-Fi PA has excellent measured AM-AM and AM-PM characteristics.